Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN

Gelhausen, O; Klein, HN; Phillips, MR; Goldys, EM

Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN

Gelhausen, O Klein, HN Phillips, MR

Goldys, EM

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Publication Type:: Journal Article
Citation:: Applied Physics Letters, 2003, 83 (16), pp. 3293 - 3295
Issue Date:: 2003-10-20

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Field	Value	Language
dc.contributor.author	Gelhausen, O	en_US
dc.contributor.author	Klein, HN	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Goldys, EM	en_US
dc.date.issued	2003-10-20	en_US
dc.identifier.citation	Applied Physics Letters, 2003, 83 (16), pp. 3293 - 3295	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://hdl.handle.net/10453/498
dc.description.abstract	A study was performed on the effect of low-energy electron-beam irradiation (LEEBI) in activated Mg-doped GaN. The residual impurities and native defects in metalorganic-vapor-phase-epitaxy-grown, GaN were also studied. Excitation power density-resolved and temperature-resolved cathodoluminescence spectroscopy was used for the study. It was found that the LEEBI-treatment dissociated neutral Mg-H complexes and other hydrogenated defect complexes and gave rise to additional radiative recombination channels.	en_US
dc.relation.ispartof	Applied Physics Letters	en_US
dc.relation.isbasedon	10.1063/1.1619210	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN	en_US
dc.type	Journal Article
utslib.citation.volume	16	en_US
utslib.citation.volume	83	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
utslib.for	10 Technology	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	16	en_US
pubs.publication-status	Published	en_US
pubs.volume	83	en_US

Abstract:

A study was performed on the effect of low-energy electron-beam irradiation (LEEBI) in activated Mg-doped GaN. The residual impurities and native defects in metalorganic-vapor-phase-epitaxy-grown, GaN were also studied. Excitation power density-resolved and temperature-resolved cathodoluminescence spectroscopy was used for the study. It was found that the LEEBI-treatment dissociated neutral Mg-H complexes and other hydrogenated defect complexes and gave rise to additional radiative recombination channels.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/498