Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD

Chen, PPT; Butcher, KSA; Wintrebert-Fouquet, M; Wuhrer, R; Phillips, MR; Prince, KE; Timmers, H; Shrestha, SK; Usher, BF

Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD

Chen, PPT Butcher, KSA Wintrebert-Fouquet, M Wuhrer, R Phillips, MR

Prince, KE Timmers, H Shrestha, SK Usher, BF

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Publication Type:: Journal Article
Citation:: Journal of Crystal Growth, 2006, 288 (2), pp. 241 - 246
Issue Date:: 2006-03-01

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Field	Value	Language
dc.contributor.author	Chen, PPT	en_US
dc.contributor.author	Butcher, KSA	en_US
dc.contributor.author	Wintrebert-Fouquet, M	en_US
dc.contributor.author	Wuhrer, R	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Prince, KE	en_US
dc.contributor.author	Timmers, H	en_US
dc.contributor.author	Shrestha, SK	en_US
dc.contributor.author	Usher, BF	en_US
dc.date.issued	2006-03-01	en_US
dc.identifier.citation	Journal of Crystal Growth, 2006, 288 (2), pp. 241 - 246	en_US
dc.identifier.issn	0022-0248	en_US
dc.identifier.uri	http://hdl.handle.net/10453/635
dc.description.abstract	The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical absorption spectra show a broad range of apparent band-gap values from approximately 2.3-0.9 eV, depending on the growth temperature. The influence of growth temperature on crystallinity, level of impurity incorporation, stoichiometry, and lattice distortion are analysed. The possible causes of the apparent band-gap shift in indium nitride are discussed. © 2006 Elsevier B.V. All rights reserved.	en_US
dc.relation	http://purl.org/au-research/grants/arc/LE0560850
dc.relation.ispartof	Journal of Crystal Growth	en_US
dc.relation.isbasedon	10.1016/j.jcrysgro.2005.12.005	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD	en_US
dc.type	Journal Article
utslib.citation.volume	2	en_US
utslib.citation.volume	288	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	0303 Macromolecular and Materials Chemistry	en_US
utslib.for	0912 Materials Engineering	en_US
dc.location.activity	Kailua Kona, HI
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	2	en_US
pubs.publication-status	Published	en_US
pubs.volume	288	en_US

Abstract:

The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical absorption spectra show a broad range of apparent band-gap values from approximately 2.3-0.9 eV, depending on the growth temperature. The influence of growth temperature on crystallinity, level of impurity incorporation, stoichiometry, and lattice distortion are analysed. The possible causes of the apparent band-gap shift in indium nitride are discussed. © 2006 Elsevier B.V. All rights reserved.

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http://hdl.handle.net/10453/635