Multi-axis retarder arrays by masked oblique deposition

Arnold, MD; Hodgkinson, IJ; Wu, QH; Blaikie, RJ

Multi-axis retarder arrays by masked oblique deposition

Arnold, MD

Hodgkinson, IJ Wu, QH Blaikie, RJ

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Publication Type:: Journal Article
Citation:: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2005, 23 (4), pp. 1398 - 1404
Issue Date:: 2005-12-01

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Field	Value	Language
dc.contributor.author	Arnold, MD https://orcid.org/0000-0003-4164-0242	en_US
dc.contributor.author	Hodgkinson, IJ	en_US
dc.contributor.author	Wu, QH	en_US
dc.contributor.author	Blaikie, RJ	en_US
dc.date.issued	2005-12-01	en_US
dc.identifier.citation	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2005, 23 (4), pp. 1398 - 1404	en_US
dc.identifier.issn	1071-1023	en_US
dc.identifier.uri	http://hdl.handle.net/10453/703
dc.description.abstract	We report a technique for single-deposition production of arrays with differently oriented nano-structured elements, which we optimize for application to form-birefringent retarder arrays. The technique involves masking of oblique physical vapor deposition, manipulating the local availability of vapor angles to create spatially variant properties in the structured coating. We have designed a variety of retarder arrays using symmetry considerations, and constructed a selection based on suitability for spatially multiplexed complete-Stokes polarimetry. In particular, we emphasize square lattice designs with a two-by-two repeat unit, consisting of three retarders with azimuths at 0°, 45° and 90° and a zero-retardation element. The silicon retarder arrays were tested using visible-wavelength transmission techniques which confirm the success of the method. Finally, we discuss some considerations for application of the technique to microlithography, and we infer a lateral resolution limit related to the coating thickness. © 2005 American Vacuum Society.	en_US
dc.relation.ispartof	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures	en_US
dc.relation.isbasedon	10.1116/1.1993618	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Multi-axis retarder arrays by masked oblique deposition	en_US
dc.type	Journal Article
utslib.citation.volume	4	en_US
utslib.citation.volume	23	en_US
utslib.for	0901 Aerospace Engineering	en_US
utslib.for	0401 Atmospheric Sciences	en_US
utslib.for	0912 Materials Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	open_access
pubs.issue	4	en_US
pubs.publication-status	Published	en_US
pubs.volume	23	en_US

Abstract:

We report a technique for single-deposition production of arrays with differently oriented nano-structured elements, which we optimize for application to form-birefringent retarder arrays. The technique involves masking of oblique physical vapor deposition, manipulating the local availability of vapor angles to create spatially variant properties in the structured coating. We have designed a variety of retarder arrays using symmetry considerations, and constructed a selection based on suitability for spatially multiplexed complete-Stokes polarimetry. In particular, we emphasize square lattice designs with a two-by-two repeat unit, consisting of three retarders with azimuths at 0°, 45° and 90° and a zero-retardation element. The silicon retarder arrays were tested using visible-wavelength transmission techniques which confirm the success of the method. Finally, we discuss some considerations for application of the technique to microlithography, and we infer a lateral resolution limit related to the coating thickness. © 2005 American Vacuum Society.

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http://hdl.handle.net/10453/703