Physical and optical characterisation of Ge-implanted silica

Dowd, A; Llewellyn, D; Elliman, RG; Luther-Davies, B; Samoc, M; Fitz Gerald, JD

Physical and optical characterisation of Ge-implanted silica

Dowd, A

Llewellyn, D Elliman, RG Luther-Davies, B Samoc, M Fitz Gerald, JD

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Publication Type:: Journal Article
Citation:: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2001, 175-177 pp. 637 - 640
Issue Date:: 2001-04-01

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Field	Value	Language
dc.contributor.author	Dowd, A https://orcid.org/0000-0002-0500-3599	en_US
dc.contributor.author	Llewellyn, D	en_US
dc.contributor.author	Elliman, RG	en_US
dc.contributor.author	Luther-Davies, B	en_US
dc.contributor.author	Samoc, M	en_US
dc.contributor.author	Fitz Gerald, JD	en_US
dc.date.issued	2001-04-01	en_US
dc.identifier.citation	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2001, 175-177 pp. 637 - 640	en_US
dc.identifier.issn	0168-583X	en_US
dc.identifier.uri	http://hdl.handle.net/10453/8352
dc.description.abstract	Ge nanocrystals formed in silica by implantation with 1.0 MeV Ge ions and subsequent annealing at 1100°C were characterised by transmission electron microscopy and Raman spectroscopy. The nanocrystals were found to be approximately spherical in shape and to have a structure consistent with that of bulk Ge. The average size of the crystallites increased with increasing fluence and for a fluence of 1 × 1017 Ge cm-2 the size varied from 2.5 to 12 nm. The nonlinear optical response of the material was measured at a wavelength of 800 nm using degenerative four wave mixing and z-scan techniques. The former provided information about the magnitude and temporal response of the nonlinearity whilst the latter provided information about the operative mechanism. The magnitude of the nonlinear refractive index, \|n2\|, was shown to be more than three-orders of magnitude larger than that of pure silica and to have a relaxation time of the order of picoseconds. The mechanism causing this nonlinear response is shown to be absorptive and to increase with increasing implant fluence as a consequence. © 2001 Elsevier Science B.V.	en_US
dc.relation.ispartof	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms	en_US
dc.relation.isbasedon	10.1016/S0168-583X(00)00536-X	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Physical and optical characterisation of Ge-implanted silica	en_US
dc.type	Journal Article
utslib.citation.volume	175-177	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0205 Optical Physics	en_US
utslib.for	0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics	en_US
utslib.for	0402 Geochemistry	en_US
utslib.for	0915 Interdisciplinary Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
utslib.copyright.status	closed_access
pubs.publication-status	Published	en_US
pubs.volume	175-177	en_US

Abstract:

Ge nanocrystals formed in silica by implantation with 1.0 MeV Ge ions and subsequent annealing at 1100°C were characterised by transmission electron microscopy and Raman spectroscopy. The nanocrystals were found to be approximately spherical in shape and to have a structure consistent with that of bulk Ge. The average size of the crystallites increased with increasing fluence and for a fluence of 1 × 1017 Ge cm-2 the size varied from 2.5 to 12 nm. The nonlinear optical response of the material was measured at a wavelength of 800 nm using degenerative four wave mixing and z-scan techniques. The former provided information about the magnitude and temporal response of the nonlinearity whilst the latter provided information about the operative mechanism. The magnitude of the nonlinear refractive index, |n2|, was shown to be more than three-orders of magnitude larger than that of pure silica and to have a relaxation time of the order of picoseconds. The mechanism causing this nonlinear response is shown to be absorptive and to increase with increasing implant fluence as a consequence. © 2001 Elsevier Science B.V.

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http://hdl.handle.net/10453/8352