Probing Carrier Behavior at the Nanoscale in Gallium Nitride using Low Voltage Cathodoluminescence

Phillips, M

Drouin, D Goldys, EM

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Field	Value	Language
dc.contributor.author	Phillips, M https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Drouin, D	en_US
dc.contributor.author	Goldys, EM	en_US
dc.date.issued	2006-01	en_US
dc.identifier.citation	Microscopy & Microanalysis, 2006, 12 (S2), pp. 156 - 157	en_US
dc.identifier.issn	1431-9276	en_US
dc.identifier.uri	http://hdl.handle.net/10453/8378
dc.description.abstract	NA	en_US
dc.publisher	Cambridge University Press	en_US
dc.relation.ispartof	Microscopy & Microanalysis	en_US
dc.subject.classification	Microscopy	en_US
dc.title	Probing Carrier Behavior at the Nanoscale in Gallium Nitride using Low Voltage Cathodoluminescence	en_US
dc.type	Journal Article
utslib.citation.volume	S2	en_US
utslib.citation.volume	12	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	0601 Biochemistry and Cell Biology	en_US
utslib.for	0912 Materials Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	open_access
pubs.consider-herdc	false	en_US
pubs.issue	S2	en_US
pubs.volume	12	en_US

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