High resolution radially symmetric nanostructures from simultaneous electron beam induced etching and deposition

Lobo, CJ; Toth, M; Wagner, R; Thiel, BL; Lysaght, M

High resolution radially symmetric nanostructures from simultaneous electron beam induced etching and deposition

Lobo, CJ

Toth, M

Wagner, R Thiel, BL Lysaght, M

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Publication Type:: Journal Article
Citation:: Nanotechnology, 2008, 19 (2)
Issue Date:: 2008-01-16

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Field	Value	Language
dc.contributor.author	Lobo, CJ https://orcid.org/0000-0002-2746-1363	en_US
dc.contributor.author	Toth, M https://orcid.org/0000-0003-1564-4899	en_US
dc.contributor.author	Wagner, R	en_US
dc.contributor.author	Thiel, BL	en_US
dc.contributor.author	Lysaght, M	en_US
dc.date.issued	2008-01-16	en_US
dc.identifier.citation	Nanotechnology, 2008, 19 (2)	en_US
dc.identifier.issn	0957-4484	en_US
dc.identifier.uri	http://hdl.handle.net/10453/9325
dc.description.abstract	Electron beam induced etching (EBIE) and deposition (EBID) are promising fabrication techniques in which an electron beam is used to dissociate surface-adsorbed precursor molecules to achieve etching or deposition. Spatial resolution is normally limited by the electron flux distribution at the substrate surface. Here we present simultaneous EBIE and EBID (EBIED) as a method for surpassing this resolution limit by using adsorbate depletion to induce etching and deposition in adjacent regions within the electron flux profile. Our simulation results indicate the possibility of growth control of radially symmetric nanostructures at the sub-1 nm length scale on bulk substrates. The technique is well suited to the fabrication of ring-shaped nanostructures such as those employed in plasmonics, sensing devices, magneto-optics and magnetoelectronics. © IOP Publishing Ltd.	en_US
dc.relation.ispartof	Nanotechnology	en_US
dc.relation.isbasedon	10.1088/0957-4484/19/02/025303	en_US
dc.subject.classification	Nanoscience & Nanotechnology	en_US
dc.title	High resolution radially symmetric nanostructures from simultaneous electron beam induced etching and deposition	en_US
dc.type	Journal Article
utslib.citation.volume	2	en_US
utslib.citation.volume	19	en_US
utslib.for	0904 Chemical Engineering	en_US
dc.location.activity	ISI:000252828900009	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - IBMD - Initiative for Biomedical Devices
pubs.organisational-group	/University of Technology Sydney/Strength - MTEE - Research Centre Materials and Technology for Energy Efficiency
utslib.copyright.status	closed_access
pubs.issue	2	en_US
pubs.publication-status	Published	en_US
pubs.volume	19	en_US

Abstract:

Electron beam induced etching (EBIE) and deposition (EBID) are promising fabrication techniques in which an electron beam is used to dissociate surface-adsorbed precursor molecules to achieve etching or deposition. Spatial resolution is normally limited by the electron flux distribution at the substrate surface. Here we present simultaneous EBIE and EBID (EBIED) as a method for surpassing this resolution limit by using adsorbate depletion to induce etching and deposition in adjacent regions within the electron flux profile. Our simulation results indicate the possibility of growth control of radially symmetric nanostructures at the sub-1 nm length scale on bulk substrates. The technique is well suited to the fabrication of ring-shaped nanostructures such as those employed in plasmonics, sensing devices, magneto-optics and magnetoelectronics. © IOP Publishing Ltd.

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http://hdl.handle.net/10453/9325