Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer

Rajan, A; Rogers, DJ; Ton-That, C; Zhu, L; Phillips, MR; Sundaram, S; Gautier, S; Moudakir, T; El-Gmili, Y; Ougazzaden, A; Sandana, VE; Teherani, FH; Bove, P; Prior, KA; Djebbour, Z; McClintock, R; Razeghi, M

Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer

Rajan, A Rogers, DJ Ton-That, C

Zhu, L Phillips, MR

Sundaram, S Gautier, S Moudakir, T El-Gmili, Y Ougazzaden, A Sandana, VE Teherani, FH Bove, P Prior, KA Djebbour, Z McClintock, R Razeghi, M

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Publication Type:: Journal Article
Citation:: Journal of Physics D: Applied Physics, 2016, 49 (31)
Issue Date:: 2016-07-15

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Field	Value	Language
dc.contributor.author	Rajan, A	en_US
dc.contributor.author	Rogers, DJ	en_US
dc.contributor.author	Ton-That, C https://orcid.org/0000-0003-3276-1739	en_US
dc.contributor.author	Zhu, L	en_US
dc.contributor.author	Phillips, MR https://orcid.org/0000-0003-1522-9281	en_US
dc.contributor.author	Sundaram, S	en_US
dc.contributor.author	Gautier, S	en_US
dc.contributor.author	Moudakir, T	en_US
dc.contributor.author	El-Gmili, Y	en_US
dc.contributor.author	Ougazzaden, A	en_US
dc.contributor.author	Sandana, VE	en_US
dc.contributor.author	Teherani, FH	en_US
dc.contributor.author	Bove, P	en_US
dc.contributor.author	Prior, KA	en_US
dc.contributor.author	Djebbour, Z	en_US
dc.contributor.author	McClintock, R	en_US
dc.contributor.author	Razeghi, M	en_US
dc.date.issued	2016-07-15	en_US
dc.identifier.citation	Journal of Physics D: Applied Physics, 2016, 49 (31)	en_US
dc.identifier.issn	0022-3727	en_US
dc.identifier.uri	http://hdl.handle.net/10453/96953
dc.description.abstract	© 2016 IOP Publishing Ltd. Full 2 inch GaN epilayers were lifted off GaN and c-sapphire substrates by preferential chemical dissolution of sacrificial ZnO underlayers. Modification of the standard epitaxial lift-off (ELO) process by supporting the wax host with a glass substrate proved key in enabling full wafer scale-up. Scanning electron microscopy and x-ray diffraction confirmed that intact epitaxial GaN had been transferred to the glass host. Depth-resolved cathodoluminescence (CL) analysis of the bottom surface of the lifted-off GaN layer revealed strong near-band-edge (3.33 eV) emission indicating a superior optical quality for the GaN which was lifted off the GaN substrate. This modified ELO approach demonstrates that previous theories proposing that wax host curling was necessary to keep the ELO etch channel open do not apply to the GaN/ZnO system. The unprecedented full wafer transfer of epitaxial GaN to an alternative support by ELO offers the perspective of accelerating industrial adoption of the expensive GaN substrate through cost-reducing recycling.	en_US
dc.relation.ispartof	Journal of Physics D: Applied Physics	en_US
dc.relation.isbasedon	10.1088/0022-3727/49/31/315105	en_US
dc.subject.classification	Applied Physics	en_US
dc.title	Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer	en_US
dc.type	Journal Article
utslib.citation.volume	31	en_US
utslib.citation.volume	49	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0204 Condensed Matter Physics	en_US
utslib.for	02 Physical Sciences	en_US
utslib.for	09 Engineering	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Science
pubs.organisational-group	/University of Technology Sydney/Faculty of Science/School of Mathematical and Physical Sciences
pubs.organisational-group	/University of Technology Sydney/Strength - CCET - Centre for Clean Energy Technology
utslib.copyright.status	closed_access
pubs.issue	31	en_US
pubs.publication-status	Published	en_US
pubs.volume	49	en_US

Abstract:

© 2016 IOP Publishing Ltd. Full 2 inch GaN epilayers were lifted off GaN and c-sapphire substrates by preferential chemical dissolution of sacrificial ZnO underlayers. Modification of the standard epitaxial lift-off (ELO) process by supporting the wax host with a glass substrate proved key in enabling full wafer scale-up. Scanning electron microscopy and x-ray diffraction confirmed that intact epitaxial GaN had been transferred to the glass host. Depth-resolved cathodoluminescence (CL) analysis of the bottom surface of the lifted-off GaN layer revealed strong near-band-edge (3.33 eV) emission indicating a superior optical quality for the GaN which was lifted off the GaN substrate. This modified ELO approach demonstrates that previous theories proposing that wax host curling was necessary to keep the ELO etch channel open do not apply to the GaN/ZnO system. The unprecedented full wafer transfer of epitaxial GaN to an alternative support by ELO offers the perspective of accelerating industrial adoption of the expensive GaN substrate through cost-reducing recycling.

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http://hdl.handle.net/10453/96953