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Showing results 2 to 7 of 7
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Issue Date
Title
Author(s)
2004-01-01
Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers
Godlewski, M
;
Łusakowska, E
;
Bozek, R
;
Goldys, EM
;
Phillips, MR
;
Böttcher, T
;
Figge, S
;
Hommel, D
2004-02-29
Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure
Godlewski, M
;
Łusakowska, E
;
Goldys, EM
;
Phillips, MR
;
Böttcher, T
;
Figge, S
;
Hommel, D
;
Prystawko, P
;
Leszczynski, M
;
Grzegory, I
;
Porowski, S
2005-11-07
Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
Godlewski, M
;
Ivanov, VY
;
Łusakowska, E
;
Boźek, R
;
Masojedovas, S
;
Juršénas, S
;
Kazlauskas, K
;
Žukauskas, A
;
Goldys, EM
;
Phillips, MR
;
Böttcher, T
;
Figge, S
;
Hommel, D
2004-05-18
Luminescent properties of wide bandgap materials at room temperature
Godlewski, M
;
Szmidt, J
;
Olszyna, A
;
Werbowy, A
;
Łusakowska, E
;
Phillips, MR
;
Goldys, EM
;
Sokolowska, A
2004-05-24
Monocrystalline thin films of ZnSe and ZnO grown by atomic layer epitaxy
Kopalko, K
;
Godlewski, M
;
Guziewicz, E
;
Łusakowska, E
;
Paszkowicz, W
;
Domagała, J
;
Dynowska, E
;
Szczerbakow, A
;
Wójcik, A
;
Phillips, MR
2003-05-01
Origin of white color light emission in ALE-grown ZnSe
Godlewski, M
;
Guziewicz, E
;
Kopalko, K
;
Łusakowska, E
;
Dynowska, E
;
Godlewski, MM
;
Goldys, EM
;
Phillips, MR