Experimental up-scaling of thermal conductivity reductions in silicon by vacancy-engineering: From the nano-To the micro-scale

Wight, NM; Bennett, NS

Experimental up-scaling of thermal conductivity reductions in silicon by vacancy-engineering: From the nano-To the micro-scale

Wight, NM Bennett, NS

Permalink

Publication Type:: Conference Proceeding
Citation:: Materials Today: Proceedings, 2018, 5 (4), pp. 10211 - 10217
Issue Date:: 2018-01-01

Closed Access

	Filename	Description	Size
	1-s2.0-S221478531733256X-main (1).pdf	Published version	701.91 kB	Adobe PDF	View/Open

Copyright Clearance Process

Recently Added
In Progress
Closed Access

This item is closed access and not available.

Full metadata record

Field	Value	Language
dc.contributor.author	Wight, NM	en_US
dc.contributor.author	Bennett, NS https://orcid.org/0000-0003-3122-4544	en_US
dc.date.issued	2018-01-01	en_US
dc.identifier.citation	Materials Today: Proceedings, 2018, 5 (4), pp. 10211 - 10217	en_US
dc.identifier.uri	http://hdl.handle.net/10453/133646
dc.description.abstract	© 2017 Elsevier Ltd. All rights reserved. A method to reduce the thermal conductivity in Si thin-films by at least an order of magnitude is shown, successfully demonstrating the up-scaling of this technique from Si nano-films. High energy self implantation of Si is used to create a supersaturation of lattice vacancy concentrations that remain following post implant rapid thermal annealing producing a disruption in phonon mode thermal transport. This method demonstrates an approach for micro-harvesting thermoelectric device applications without the difficulties faced for dimensional up-scaling in alternative Si thermoelectric approaches. Challenges surrounding the thermal budget required for post implant dopant activation in p-Type Si are also shown.	en_US
dc.relation.ispartof	Materials Today: Proceedings	en_US
dc.relation.isbasedon	10.1016/j.matpr.2017.12.267	en_US
dc.rights	info:eu-repo/semantics/closedAccess
dc.title	Experimental up-scaling of thermal conductivity reductions in silicon by vacancy-engineering: From the nano-To the micro-scale	en_US
dc.type	Conference Proceeding
utslib.citation.volume	4	en_US
utslib.citation.volume	5	en_US
utslib.for	0907 Environmental Engineering	en_US
utslib.for	0306 Physical Chemistry (incl. Structural)	en_US
utslib.for	0912 Materials Engineering	en_US
utslib.for	0914 Resources Engineering and Extractive Metallurgy	en_US
pubs.embargo.period	Not known	en_US
pubs.organisational-group	/University of Technology Sydney
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology
pubs.organisational-group	/University of Technology Sydney/Faculty of Engineering and Information Technology/School of Mechanical and Mechatronic Engineering
utslib.copyright.status	closed_access	*
pubs.issue	4	en_US
pubs.publication-status	Published	en_US
pubs.volume	5	en_US

Abstract:

© 2017 Elsevier Ltd. All rights reserved. A method to reduce the thermal conductivity in Si thin-films by at least an order of magnitude is shown, successfully demonstrating the up-scaling of this technique from Si nano-films. High energy self implantation of Si is used to create a supersaturation of lattice vacancy concentrations that remain following post implant rapid thermal annealing producing a disruption in phonon mode thermal transport. This method demonstrates an approach for micro-harvesting thermoelectric device applications without the difficulties faced for dimensional up-scaling in alternative Si thermoelectric approaches. Challenges surrounding the thermal budget required for post implant dopant activation in p-Type Si are also shown.

Please use this identifier to cite or link to this item:

http://hdl.handle.net/10453/133646