Showing results 25 to 44 of 86
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| Issue Date | Title | Author(s) |
| 2016-03-21 | Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing | Gupta, B; Di Bernardo, I; Mondelli, P; Della Pia, A; Betti, MG; Iacopi, F; Mariani, C; Motta, N |
| 2018-01-01 | Electrical challenges of heteroepitaxial 3C-SiC on silicon | Pradeepkumar, A; Gaskill, DK; Iacopi, F |
| 2018-06-07 | Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon | Pradeepkumar, A; Zielinski, M; Bosi, M; Verzellesi, G; Gaskill, DK; Iacopi, F |
| 2019-01-11 | Electron effective attenuation length in epitaxial graphene on SiC | Amjadipour, M; Macleod, J; Lipton-Duffin, J; Tadich, A; Boeckl, JJ; Iacopi, F; Motta, N |
| - | Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review | Pradeepkumar, A; Gaskill, DK; Iacopi, F |
| - | Engineering the Dissipation of Crystalline Micromechanical Resonators | Romero, E; Valenzuela, VM; Kermany, AR; Sementilli, L; Iacopi, F; Bowen, WP |
| 2021-09-01 | Enhanced absorption with graphene-coated silicon carbide nanowires for mid-infrared nanophotonics | Rufangura, P; Khodasevych, I; Agrawal, A; Bosi, M; Folland, TG; Caldwell, JD; Iacopi, F |
| 2020-08-01 | Enhanced Mid -Infrared Reflectance with Graphene Coated Silicon Carbide Nanowires | Rufangura, P; Agrawal, A; Bosi, M; Folland, TG; Caldwell, JD; Iacopi, F |
| 2024-01-17 | Epitaxial graphene growth on cubic silicon carbide on silicon with high temperature neutron reflectometry: an operando study. | Pradeepkumar, A; Cortie, D; Smyth, E; Le Brun, AP; Iacopi, F |
| 2017-07-24 | Epitaxial graphene growth on FIB patterned 3C-SiC nanostructures on Si (111): Reducing milling damage | Amjadipour, M; Macleod, J; Lipton-Duffin, J; Iacopi, F; Motta, N |
| 2015-01-01 | Erratum: Corrigendum to ''Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV'' [Carbon 68 (2014) 563-572] | Gupta, B; Notarianni, M; Mishra, N; Shafiei, M; Iacopi, F; Motta, N |
| 2013-10-01 | Evidence of a highly compressed nanolayer at the epitaxial silicon carbide interface with silicon | Iacopi, F; Brock, RE; Iacopi, A; Hold, L; Dauskardt, RH |
| 2014-03-01 | Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV | Gupta, B; Notarianni, M; Mishra, N; Shafiei, M; Iacopi, F; Motta, N |
| 2020-11 | Fabrication of free-standing silicon carbide on silicon microstructures via massive silicon sublimation | Amjadipour, M; MacLeod, J; Motta, N; Iacopi, F |
| 2016-01-01 | Factors affecting the f× Q product of 3C-SiC microstrings: What is the upper limit for sensitivity? | Kermany, AR; Bennett, JS; Brawley, GA; Bowen, WP; Iacopi, F |
| 2021-07-01 | Foreword Special Issue on Low-Temperature Processing of Electronic Materials for Cutting Edge Devices | Berger, PR; Hussain, MM; Iacopi, F; Schulze, J; Ye, P; Rachmady, W; Wen, HC; Krishnan, S |
| 2022-01-01 | GAQ-SNN: A Genetic Algorithm based Quantization Framework for Deep Spiking Neural Networks | Nguyen, DA; Tran, XT; Iacopi, F |
| 2016-09-01 | Graphene growth on silicon carbide: A review | Mishra, N; Boeckl, J; Motta, N; Iacopi, F |
| 2016-09-01 | Graphene growth on silicon carbide: A review (Phys. Status Solidi A 9∕2016) | Mishra, N; Boeckl, J; Motta, N; Iacopi, F |
| 2018-07-26 | A graphene platform on silicon for the Internet of Everything | Mishra, N; Jiao, S; Mondal, A; Khan, Z; Boeckl, JJ; Gaskill, KD; Brock, RE; Dauskardt, RH; Iacopi, F |
