Showing results 1 to 20 of 26
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Issue Date | Title | Author(s) |
2004-01-15 | Atomic layer deposition of thin films of ZnSe - Structural and optical characterization | Guziewicz, E; Godlewski, M; Kopalko, K; Łusakowska, E; Dynowska, E; Guziewicz, M; Godlewski, MM; Phillips, M |
2001-06-01 | Cathodolfiminescence studies of self-organized cdTe/ZnTe quantum dot structure grown by MBE: In-plane and in-depth properties of the system | Godlewski, M; Mackowski, S; Karczewski, G; Goldys, EM; Phillips, MR |
2004-01-01 | Cathodoluminescence and atomic force microscopy study of n-type doped GaN epilayers | Godlewski, M; Łusakowska, E; Bozek, R; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D |
2001-06-01 | Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layer | Godlewski, M; Goldys, EM; Phillips, MR; Pakula, K; Baranowski, JM |
2001-11-01 | Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures | Godlewski, M; Goldys, EM; Butcher, KSA; Phillips, MR; Pakula, K; Baranowski, JM |
2003-01-01 | Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission | Godlewski, M; Ivanov, VY; Goldys, EM; Phillips, M; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S |
2007-07-01 | Color tuning of white light emission from thin films of ZnSe | Godlewski, M; Skrobot, M; Guziewicz, E; Phillips, MR |
2004-02-29 | Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure | Godlewski, M; Łusakowska, E; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Prystawko, P; Leszczynski, M; Grzegory, I; Porowski, S |
2005-10-01 | Dynamics of light emission in CdMnS nanoparticles | Godlewski, M; Yatsunenko, S; Drozdowicz-Tomsia, K; Goldys, EM; Phillips, MR; Klar, PJ; Heimbrodt, W |
2005-11-01 | Growth and characterization of ZnO nanoparticles | Tomaszewska-Grzeda, A; Lojkowski, W; Godlewski, M; Yatsunenko, S; Drozdowicz-Tomsia, K; Goldys, EM; Phillips, MR |
2004-01-01 | In-depth and in-plane profiling of light emission properties of InGaN-based laser diode | Godlewski, M; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D; Czernecki, R; Prystawko, P; Leszczynski, M; Perlin, P; Grzegory, I; Porowski, S |
2005-11-07 | Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures | Godlewski, M; Ivanov, VY; Łusakowska, E; Boźek, R; Masojedovas, S; Juršénas, S; Kazlauskas, K; Žukauskas, A; Goldys, EM; Phillips, MR; Böttcher, T; Figge, S; Hommel, D |
2005-10-01 | Light emission properties of GaN-based laser diode structures | Godlewski, M; Phillips, MR; Czernecki, R; Targowski, G; Perlin, P; Leszczynski, M; Figge, S |
2004-05-18 | Luminescent properties of wide bandgap materials at room temperature | Godlewski, M; Szmidt, J; Olszyna, A; Werbowy, A; Łusakowska, E; Phillips, MR; Goldys, EM; Sokolowska, A |
2004-10-20 | Mechanism of intra-shell recombination of transition metal and rare earth ions in nanostructures of II-VI compounds | Godlewski, M; Yatsunenko, S; Khachapuridze, A; Ivanov, VY; Gołacki, Z; Karczewski, G; Bergman, PJ; Klar, PJ; Heimbrodt, W; Phillips, MR |
2007-01-01 | Mechanisms of enhancement of light emission in nanostructures of II-VI compounds doped with manganese | Godlewski, M; Yatsunenko, S; Ivanov, VY; Drozdowicz-Tomsia, K; Goldys, EM; Phillips, MR; Klar, PJ; Heimbrodt, W |
2004-05-24 | Monocrystalline thin films of ZnSe and ZnO grown by atomic layer epitaxy | Kopalko, K; Godlewski, M; Guziewicz, E; Łusakowska, E; Paszkowicz, W; Domagała, J; Dynowska, E; Szczerbakow, A; Wójcik, A; Phillips, MR |
2004-01-01 | Monocrystalline ZnO films grown by atomic layer epitaxy - growth and characterization | Kopalko, K; Godlewski, M; Lusakowska, E; Paszkowicz, W; Domagala, JZ; Szczerbakow, A; Ivanov, VY; Godlewski, MM; Phillips, MR; Munoz, M; Tamargo, M; Furdyna, J; Luo, H |
2009-01-01 | Optical properties of manganese doped wide band gap ZnS and ZnO | Godlewski, M; Wójcik-Głodowska, A; Guziewicz, E; Yatsunenko, S; Zakrzewski, A; Dumont, Y; Chikoidze, E; Phillips, MR |
2005-01-01 | Origin of ultrafast component of photoluminescence decay in nanostructures doped with transition metal or rare-earth ions | Godlewski, M; Yatsunenko, S; Ivanov, VYU; Khachapuridze, A; Świa̧tek, K; Goldys, EM; Phillips, MR; Klar, PJ; Heimbrodt, W |